vishay siliconix SI3861BDv document number: 73343 s09-2110-rev. b, 12-oct-09 www.vishay.com 1 load switch with level-shift features ? halogen-free according to iec 61249-2-21 definition ? 4.5 v rated ? esd protected: 3000 v ? 105 m low r ds(on) trenchfet ? ? 4.5 v to 20 v input ? 1.5 v to 8 v logic level control ? low profile, small footprint tsop-6 package ? 3000 v esd protection on input switch, v on/off ? adjustable slew-rate ? compliant to rohs directive 2002/95/ec product summary v ds2 (v) r ds(on) ( )i d (a) 4.5 to 20 0.075 at v in = 10 v 2.3 0.120 at v in = 5.0 v 1.9 0.145 at v in = 4.5 v 1.7 description the SI3861BDv includes a p- and n-channel mosfet in a single tsop-6 package. the low on-resistance p-channel trenchfet ? is tailored for use as a load switch. the n-channel, with an external resistor, can be used as a level- shift to drive the p-channel load-switch. the n-channel mosfet has internal esd protection and can be driven by logic signals as low as 1.5 v. the si3861dv operates on supply lines from 4.5 to 20 v, and can drive loads up to 2.3 a. application circuits v out g n d load v i n o n /off r2 r2 1 2, 3 c1 6 4 6 5 r1 q1 q2 si3 8 61bdv c o c i n ote: for r2 s w itching v ariations w ith other v i n /r1 com b inations see typical characteristics 0 2 4 6 8 10 0246 8 10 12 r2 (k ) ( time s) i l = 1 a v o n /off = 3 v c i = 10 f c o = 1 f t f t d(off) t r t d(on) the SI3861BDv is ideally suited for high-side load switching in portable applications. the integrated n-channel level-shift device saves space by reducing external components. the slew rate is set externally so that rise-times can be tailored to different load types. note: * minimum r1 value should be at leas t 10 x r2 to ensure q1 turn-on. components r1 pull-up resistor typical 10 k to 1 m * r2 optional slew-rate control typical 0 to 100 k * c1 optional slew-rate control typical 1000 pf
www.vishay.com 2 document number: 73343 s09-2110-rev. b, 12-oct-09 vishay siliconix SI3861BDv new product functional block diagram notes: a. surface mounted on fr4 board. b. v in = 12 v, v on/off = 8 v, t a = 25 c. c. pulse test: pulse width 300 s, duty cycle 2 %. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. d2 tsop-6 top v ie w 6 4 1 2 3 5 s2 o n /off r1, c1 d2 d2 r2 s2 o n /off 1 4 6 5 q1 q2 si3 8 61bdv r1, c1 2, 3 orderin g information: si3 8 61bd v -t1-e3 (lead (p b )-free) si3 8 61bd v -t1-ge3 (lead (p b )-free and halogen-free) r2 absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit input voltage v in 20 v on/off voltage v on/off 8 load current continuous a, b i l 2.3 a pulsed b, c 4 continuous intrinsic diode conduction a i s - 1 maximum power dissipation a p d 0.83 w operating junction and storage temperature range t j , t stg - 55 to 150 c esd rating, mil-std-883d human body model (100 pf, 1500 ) esd 3 kv thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient (continuous current) a r thja 120 150 c/w maximum junction-to-foot (q2) r thjf 60 80 specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit off characteristics reverse leakage current i fl v in = 30 v, v on/off = 0 v 1 a diode forward voltage v sd i s = - 1 a - 0.8 - 1 v on characteristics input voltage range v in 4.5 20 v on-resistance (p-channel) at 1 a r ds(on) v on/off = 1.5 v, i d = 1 a v in = 10 v 0.060 0.075 v in = 5.0 v 0.096 0.120 v in = 4.5 v 0.115 0.145 on-state (p-channel) drain-current i d(on) v in-out 0.2 v, v in = 10 v, v on/off = 1.5 v 1 a v in-out 0.3 v, v in = 5 v, v on/off = 1.5 v 1
document number: 73343 s09-2110-rev. b, 12-oct-09 www.vishay.com 3 vishay siliconix SI3861BDv new product typical characteristics 25 c, unless otherwise noted v drop vs. i l at v in = 10 v v drop vs. i l at v in = 4.5 v v drop variance vs. junction temperature 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0123456 i l - (a) ( v ) v drop v o n /off = 1.5 v to 8 v t j = 125 c t j = 25 c 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 0123456 i l - (a) ( v ) v drop v o n /off = 1.5 v to 8 v t j = 125 c t j = 25 c - 0.04 - 0.02 0.00 0.02 0.04 0.06 0.0 8 - 50 - 25 0 25 50 75 100 125 150 t j - j u nction temperat u re (c) v ariance ( v ) v drop i l = 1 a v o n /off = 1.5 v to 8 v v i n = 10 v v i n = 5 v v drop vs. i l at v in = 5 v v drop vs. v in at = 1 a on-resistance vs. input voltage 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 0123456 i l - (a) ( v ) v drop v o n /off = 1.5 v to 8 v t j = 125 c t j = 25 c 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 2.0 0246 8 10 12 v i n ( v ) ( v ) v drop i l = 1 a v o n /off = 1.5 v to 8 v t j = 125 c t j = 25 c 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 2.0 0246 8 10 12 - on-resistance ( ) r ds(on) v i n ( v ) i l = 1 a v o n /off = 1.5 v to 8 v t j = 125 c t j = 25 c
www.vishay.com 4 document number: 73343 s09-2110-rev. b, 12-oct-09 vishay siliconix SI3861BDv new product typical characteristics 25 c, unless otherwise noted normalized on-resistance vs. junction temperature switching variation r2 at v in = 5 v, r1 = 20 k switching variation r2 at v in = 10 v, r1 = 300 k 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 - 100 - 50 0 50 100 150 200 t j - j u nction temperat u re ( c) i l = 1 a v o n /off = 1.5 v to 8 v v i n = 10 v v i n = 5 v r ds(on) - on-resistance ( n ormalized) 0 2 4 6 8 10 0246 8 10 12 r2 (k ) ( time s) i l = 1 a v o n /off = 3 v c i = 10 f c o = 1 f t f t d(off) t r t d(on) 0 50 100 150 200 250 0 204060 8 0100120 r2 (k ) ( time t r i l = 1 a v o n /off = 3 v c i = 10 f c o = 1 f t f t d(on) t d(off) s) switching variation r2 at v in = 10 v, r1 = 20 k switching variation r2 at v in = 4.5 v, r1 = 20 k switching variation r2 at v in = 5 v, r1 = 300 k 0 2 4 6 8 10 12 14 16 1 8 0246 8 10 12 r2 (k ) i l = 1 a v o n /off = 3 v c i = 10 f c o = 1 f ( time s) t d(on) t r t d(off) t f 0 2 4 6 8 10 12 14 0246 8 10 12 r2 (k ) ( time s) i l = 1 a v o n /off = 3 v c i = 10 f c o = 1 f t f t d(off) t r t d(on) 0 20 40 60 8 0 100 120 0 204060 8 0 100 120 r2 (k ) i l = 1 a v o n /off = 3 v c i = 10 f c o = 1 f t r t d(on) t d(off) t f ( time s)
document number: 73343 s09-2110-rev. b, 12-oct-09 www.vishay.com 5 vishay siliconix SI3861BDv new product typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73343 . switching variation r2 at v in = 4.5 v, r1 = 300 k 0 20 40 60 8 0 100 120 0204060 8 0100120 r2 (k ) ( time s) i l = 1 a v o n /off = 3 v c i = 10 f c o = 1 f t d(on) t r t f t d(off) normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 0 0 6 0 1 1 10 -1 10 -4 100 2 1 0.1 0.01 n ormalized effecti v e transient thermal impedance 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 1. d u ty cycle, d = 2. per unit base = r thja = 150 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 n otes: 4. s u rface mo u nted p dm sq u are w a v e p u lse d u reation (s)
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